MTE652T2 PCIe M.2 SSD 512GB TS512GMTE652T2 Features: Firmware Supports NVM command Dynamic thermal throttling Built-in LDPC ECC (Error Correction Code) functionality Advanced Global Wear-Leveling and Block management for reliability Advanced Garbage Collection Full drive encryption with Advanced Encryption Standard (AES) (optional) Hardware Compliant with RoHS 2.0 standards Compliant with NVM Express specification 1.3 Compliant with PCI Express specification 3.1 Space-saving M.2 form factor (80mm) – ideal for mobile computing devices PCIe Gen 3 x4 interface DDR3 DRAM Cache embedded Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed Key components fortified by default with Corner Bond technology 30µ" PCB gold finger Promised operational reliability in an extended temperature range (from -20°C to 75°C) Specifications: Appearance Dimensions 80 mm x 22 mm x 3.58 mm (3.15" x 0.87" x 0.14") Weight 9 g (0.32 oz) Form Factor M.2 M.2 Type 2280-D2-M (Double-sided) Interface Bus Interface NVMe PCIe Gen3 x4 Storage Flash Type 3D NAND flash Capacity 512 GB Operating Environment Operating Voltage 3.3V±5% Operating Temperature -20°C (-4°F) ~ 75°C (167°F) Storage Temperature -55°C (-67°F) ~ 85°C (185°F) Humidity 5% ~ 95% Shock 1500 G, 0.5 ms, 3 axis Vibration (Operating) 20 G (peak-to-peak), 7 Hz ~ 2,000 Hz (frequency) Power Power Consumption (Operation) 3.3 watt(s) Power Consumption (Sleep) 0.6 watt(s) Performance Sequential Read/Write (CrystalDiskMark) Read: up to 2,100 MB/s, Write: up to 1,000 MB/s 4K Random Read/Write (IOmeter) Read: up to 190,000 IOPS, Write: up to 290,000 IOPS Mean Time Between Failures (MTBF) 3,000,000 hour(s) Terabytes Written (TBW) up to 1,080 TBW Drive Writes Per Day (DWPD) 2 (3 yrs) Warranty Certificate CE/FCC/BSMI Warranty Three-year Limited Warranty